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Samsung Electronics CTO Song Jae-hyuk explains key products and technologies at Computex held in Taipei, Taiwan, on the 2nd (local time). / Photo via Samsung Electronics

Samsung Electronics has declared its commitment to preempting the next-generation memory market by becoming the first in the world to unveil a physical mockup of HBM5, following the sample shipment of its seventh-generation High Bandwidth Memory (HBM), HBM4E. By enhancing stability with the application of a new thermal management technology to improve system efficiency, the company has set out to showcase its definitive technological leadership to the world.

On the 2nd (local time), Samsung Electronics participated in Computex 2026 held in Taipei, Taiwan, and unveiled the physical mockup of HBM5 for the first time in the world. On this day, Song Jae-hyuk, President and Chief Technology Officer (CTO) of the DS Division, introduced HBM5 and explained the technological direction through a product structure incorporating HPB (Heat Path Block), a next-generation thermal management technology.

HPB is a technology designed to resolve the increasing heat generation issues that arise during the high-performance advancement of AI memory. It is engineered to disperse and dissipate heat more efficiently, and Samsung's HBM5 is explained to have lowered thermal resistance and enhanced operational stability by adding a separate heat transfer path.

Samsung Electronics also emphasized that it has completed the implementation and verification of HPB technology in its HBM4E products, which have already been shipped as samples. This implies that the company has verified everything from structural design to reliability and package stability by applying the next-generation technology to actual products.

President Song also stated that this rapid technological advancement stems from the capabilities of an integrated device manufacturer (IDM). The company plans to fully apply its capabilities spanning product design, memory, and packaging to HBM5 to further advance product performance and stability.

Samsung Electronics also revealed its HBM4E wafers and chipsets at this exhibition. Samsung Electronics' HBM4E is a product that integrates the company's unique total solution competitiveness, featuring a structure that combines the most advanced 1c DRAM core die with its proprietary foundry 4-nanometer process base die. Having completed its initial sample shipment on the 29th of last month, the product proved its technological competitiveness by operating stably at 14 Gbps per pin and achieving up to 16 Gbps (up to a 4 TB/s bandwidth).

Meanwhile, Nvidia's Vera Rubin, powered by Samsung Electronics' products, was also on display at Samsung Electronics' Computex exhibition space. This showcased the memory and storage portfolio supporting the Vera Rubin system all at once, ranging from HBM4 to SOCAMM2 and PM1763.

In particular, HBM4, which Samsung Electronics mass-shipped for the first time in the industry last February, achieves the industry's highest performance of 11.7 Gbps (up to 13 Gbps) to support ultra-fast data processing for customers' AI systems. "We plan to continuously strengthen our competitiveness in next-generation memory technology based on cooperation with global companies, including Nvidia," President Song stated.

                                                                                                               Lee Ji-sun